Datasheet Summary
150 V, 1 A NPN high-voltage low VCEsat BISS transistor
10 January 2017
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP plement: PBHV9115TLH
2. Features and benefits
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- Small SMD plastic package
- AEC-Q101 qualified
3. Applications
- Power management
- LCD backlighting
- LED driver for LED chain module
- Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO...
