PBHV8115X
Description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115X.
Key Features
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- AEC-Q101 qualified
- Medium power SMD plastic package
