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PBHV8118T - 1 A NPN high-voltage low VCEsat(BISS) transistor

General Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Key Features

  • High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.3.

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www.DataSheet4U.com PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits „ „ „ „ „ „ High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.3 Applications „ „ „ „ „ LED driver for LED chain module LCD backlighting Automotive power management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1.