PBHV8118T Datasheet 1 A NPN High-voltage Low Vcesat(biss) Transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.

Datasheet Details

Part number	PBHV8118T
Manufacturer	NXP Semiconductors
File Size	196.41 KB
Description	1 A NPN high-voltage low VCEsat(BISS) transistor
Datasheet	PBHV8118T_PhilipsSemiconductors.pdf

General Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

1.2

Key Features

High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.3.

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