PBHV8115T Datasheet | NXP Semiconductors

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 - 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP plement: PBHV9115T. 1.2 Features I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.3 Applications I I I I I I .. LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting...