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PBHV8115T - 1A NPN high-voltage low VCEsat (BISS) transistor

General Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9115T.

Key Features

  • I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T. 1.2 Features I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.3 Applications I I I I I I www.DataSheet4U.com LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.