Datasheet Summary
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
28 September 2017
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
NPN plement: PBHV8540X
2. Features and benefits
- High voltage
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- AEC-Q101 qualified
3. Applications
- Electronic ballast for fluorescent lighting
- LED driver for LED chain module
- LCD backlighting
- High Intensity Discharge (HID) front lighting
-...