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PMN16XNE - N-channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • Enhanced power dissipation capability of 1400 mW.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3.

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Datasheet Details

Part number PMN16XNE
Manufacturer nexperia
File Size 730.72 KB
Description N-channel MOSFET
Datasheet download datasheet PMN16XNE Datasheet
Additional preview pages of the PMN16XNE datasheet.

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Full PDF Text Transcription

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PMN16XNE 20 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1400 mW • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • LED driver • Power management • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.
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