PMN16XNE
PMN16XNE is N-channel MOSFET manufactured by Nexperia.
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- Enhanced power dissipation capability of 1400 m W
- Electro Static Discharge (ESD) protection > 1 k V HBM
3. Applications
- LED driver
- Power management
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 6.9 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12
- 12 V
[1]
- - 9.1 A
- 15 19 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain
Simplified...
