PMN16XNE Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMN16XNE Key Features
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- Enhanced power dissipation capability of 1400 mW
- ElectroStatic Discharge (ESD) protection > 1 kV HBM