PMN55ENE
PMN55ENE is N-channel MOSFET manufactured by Nexperia.
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Trench MOSFET technology
- Logic-level patible
- Very fast switching
- Electro Static Discharge (ESD) protection > 2 k V HBM
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5s
VGS = 10 V; ID = 3.4 A; Tj = 25 °C
Min Typ Max Unit
- - 60 V
-20
- 20 V
[1]
- - 4.5 A
- 46 60 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain
Simplified outline
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