Datasheet4U Logo Datasheet4U.com

PMV25ENEA - N-channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

Datasheet preview – PMV25ENEA

Datasheet Details

Part number PMV25ENEA
Manufacturer nexperia
File Size 250.22 KB
Description N-channel MOSFET
Datasheet download datasheet PMV25ENEA Datasheet
Additional preview pages of the PMV25ENEA datasheet.

📁 Similar Datasheet

  • PMV250EPEA - P-channel Trench MOSFET (NXP)
  • PMV20XN - N-channel Trench MOSFET (NXP Semiconductors)
  • PMV213SN - uTrenchMOS standard level FET (NXP)
  • PMV22EN - N-channel Trench MOSFET (NXP Semiconductors)
  • PMV28UN - N-channel Trench MOSFET (NXP Semiconductors)
  • PMV117EN - uTrenchMOS enhanced logic level FET (NXP)
  • PMV117EN - N-Channel MOSFET (VBsemi)
  • PMV130ENEA - N-channel Trench MOSFET (NXP)
  • PMV160UP - 1.2A P-channel Trench MOSFET (NXP Semiconductors)
  • PMV16UN - N-channel Trench MOSFET (NXP Semiconductors)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
SOT23 PMV25ENEA 30 V, N-channel Trench MOSFET 26 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.
Published: |