PMV27UPE Datasheet PDF - nexperia P-channel MOSFET Specs

PMV27UPE - P-channel MOSFET

Datasheet Summary

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology.
Low threshold voltage.
Very fast switching.
Enhanced power dissipation capability: Ptot = 980 mW.
ElectroStatic Discharge (ESD) protection 2 kV HBM 3.

Datasheet Details

Part number	PMV27UPE
Manufacturer	nexperia
File Size	854.80 KB
Description	P-channel MOSFET
Datasheet	PMV27UPE Datasheet
Additional preview pages of the PMV27UPE datasheet.

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Full PDF Text Transcription

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PMV27UPE 20 V, P-channel Trench MOSFET 15 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability: Ptot = 980 mW • ElectroStatic Discharge (ESD) protection 2 kV HBM 3. Applications • LED driver • Power management • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.

Published: Jul 28, 2019 |