onsemi 2N5086
PNP General Purpose Amplifier
| Part No. | 2N5086 |
|---|---|
| Datasheet | 2N5086 Download |
| Manufacturer |  onsemi |
| Description | PNP General Purpose Amplifier |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
* Ta=25°C unless otherwise noted Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector current - Continuous TJ, Tstg Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value -50 -50 -3.0 -100 -55 ~ +150 Units V V V mA °C NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.ELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -50 V(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 ICEO Collector Cutoff Current VCB = -10V, IE = 0 VCB = -35V, IE = 0 ICBO Emitter Cutoff Current VEB = -3.0V, IC = 0 On Characteristic...
