onsemi 2N6387
2N6388 is a Preferred Device Plastic Medium−Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications.| Part No. | 2N6387 |
|---|---|
| Datasheet | 2N6387 Download |
| Manufacturer |  onsemi |
| Description | Plastic Medium-Power Silicon Transistors |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc● Collector−Emitter Sustaining Voltage − @ 100 mAdc
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● VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc − 2N6387, 2N6388 Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package Pb−Free Packages are Available* DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS MARKING DIAGRAM
MAXIMUM RATINGS
(Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction, Temperature Range 2N6387 2N6388 2N6387 2N6388 Symbol VCEO VCB VEB IC IB PD PD TJ, Tstg Value 60 80 60 80 5.0 10 15 250 65 0.52 2.0 0.016 −65 to +150 Unit Vdc Vdc Vdc Adc mAdc W W/°C W W/°C °C 2N6387 Sy...
