onsemi 2N6517
NPN Epitaxial Silicon Transistor
| Part No. | 2N6517 |
|---|---|
| Datasheet | 2N6517 Download |
| Manufacturer |  onsemi |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High Voltage Transistor● Collector Dissipation: PC(max) = 625 mW
● Complement to 2N6520
● Suffix “−C” means Center Collector (1. Emitter 2. Collector 3. Base) 123 TO−92 3 4.825x4.76 CASE 135AN DATA SHEET 12 3 TO−92 3 4.83x4.76 LEADFORMED CASE 135AR
ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 2N6517 2N6517C V 350 400 VCEO Collector−Emitter Voltage 2N6517 2N6517C V 350 400 VEBO Emitter−Base Voltage 6 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature −55 ~ 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM A/2N 6517 YWW 1 23 1: Emitter 2: Base 3: Collector A 2N6517/2N6517C YWW = Assembly Code = Device Code = Date Code ORDERING INFORMAT...
