onsemi 2N7002
This Device is Pb−Free and Halogen Free DATA SHEET D G S 123 TO−92 CASE 135AN 1 2 3 1 − Source 2 − Gate 3 − Drain TO−92 CASE 135AR MARKING DIAGRAM $Y&Z&3 2N 7000 $Y = onsemi Logo &Z = Assembly Plant Code &3 = Date Code 2N7000 = Specific Device Code 3 1 2 SOT−23 CASE 318−08 1 − Gate 2 − Source 3 − Drain MARKING DIAGRAM 702MG G 702 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet.- Channels : 1
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | 2N7002 |
|---|---|
| Datasheet | 2N7002 Download |
| Manufacturer |  onsemi |
| Description | N-channel FET |
| Buy | Stock & Price |
DESCRIPTION
These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.FEATURES
● High Density Cell Design for Low RDS(on)● Voltage Controlled Small Signal Switch
● Rugged and Reliable
● High Saturation Current Capability
● ESD Protection Level: HBM > 100 V, CDM > 2 kV
● Semiconductor Components Industries, LLC, 1998 1 March, 2025 − Rev. 11 Publication Order Number: NDS7002A/D 2N7000, 2N7002, NDS7002A
ABSOLUTE MAXIMUM RATINGS
Values are at TC = 25C unless otherwise noted. Value Symbol Parameter 2N7000 2N7002 NDS7002A Unit VDSS VDGR VGSS Drain−to−Source Voltage Drain−Gate Voltage (RGS 1 MW) Gate−Source...
