onsemi 5LN01S
5LN01S IS -- VSD 3 VGS=0V 2 0.1 7 5 3 2 0.01 0.5 100 7 5 3 2 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V IT00062 Ciss, Coss, Crss -- VDS f=1MHz 10 7 5 3 2 1.0 0 0.20 Ciss Coss Crss 5 10 15 20 25 30 35 40 45 50 Drain to Source Voltage, VDS -- V PD -- Ta IT00064 Gate-to-Sourse Voltage, VGS -- V Switching Time, SW Time -- ns SW Time -- ID 1000 VDD=25V 7 VGS=4V 5 3 td(off) 2 tf 100 7 5 tr 3 2 td(on) 10 0.01 10 VDS=10V 9 ID=100mA 8 23 5 Drain Current, ID -- A VGS -- Qg 7 0.1 IT00063 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Total Gate Charge, Qg -- nC IT00065 0.1| Part No. | 5LN01S |
|---|---|
| Datasheet | 5LN01S Download |
| Manufacturer |  onsemi |
| Description | N-Channel Small Signal MOSFET |
| Buy | Stock & Price |
FEATURES
● Low ON-resistance● Ultrahigh-speed switching
● 1.5V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 50 ±10 0.1 0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7027-004 1.6 0.4 0.8 0.4 5LN01S-TL-E 0.1 0.3 1.6 0.5 0.5 0.2 0.75 0.6 0 to 0.1 1 2 3 0.1 MIN 1 : Gate 2 : Source 3 : Drain SMCP Ordering & Package Information Device Package Shipping 5LN01S-TL-E SMCP SC-75, SOT-416 3,000pcs./reel memo Pb-Free Packing Type: TL Marking LOT No.
