onsemi BC636
PNP Epitaxial Silicon Transistor
- Max Operating Temp : 150°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BC636 |
|---|---|
| Datasheet | BC636 Download |
| Manufacturer |  onsemi |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Switching and AmplifierAPPLICATIONS
● Complement to BC635● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Emitter Voltage at RBE = 1 kW VCER −45 V Collector−Emitter Voltage VCES −45 V Collector−Emitter Voltage VCEO −45 V Emitter−Base Voltage VEBO −5 V Collector Current IC −1 A Peak Collector Current ICP −1.5 A Base Current IB −100 mA Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Power Dissipation PD 1 W Dissipation Derate Above 25°C PD 8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W 1.
