onsemi ECH8690
This Power MOSFET is Produced Using onsemi’s Trench Technology, Which is Specifically Designed to Low on Resistance. This devices is suitable for applications with low on resistance requirements.| Part No. | ECH8690 |
|---|---|
| Datasheet | ECH8690 Download |
| Manufacturer |  onsemi |
| Description | Dual Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● On−State Resistance ♦ Nch:RDS(on) 1 = 42 mW (typ.) ♦ Pch:RDS(on) 1 = 73 mW (typ.)● Protection Diode In
● 4 V rive
● Nch + Pch MOSFET
● This Device is Pb−Free, Halogen Free and RoHS Compliant DATA SHEET SOT−28FL/ECH8 CASE 318BF ELECTRICAL CONNECTION 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 MARKING DIAGRAM UM LOT No. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2013 1 November, 2023 − Rev 1 Publication Order Number: ECH8690/D ECH8690
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Symbol Parameter Conditions N−Channel P−Channel Unit VDSS VGSS ID IDP PD Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation 60 −60 V ±20 ±20 V 4.7 −3.5 A PW ≤ 10 ms, duty cycle ≤ 1% 30 −30 A When mounted on ceramic substrate 1.5 W (1200 mm2 X 0.8 mm) 1 unit PT Total Dissipation...
