onsemi FDN327N
This 20 V N−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications.| Part No. | FDN327N |
|---|---|
| Datasheet | FDN327N Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 2 A, 20 V ♦ RDS(on) = 70 mW @ VGS = 4.5 V ♦ RDS(on) = 80 mW @ VGS = 2.5 V ♦ RDS(on) = 120 mW @ VGS = 1.8 V● Low Gate Charge (4.5 nC typical)
● Fast Switching Speed
● High Performance Trench Technology for Extremely Low RDS(on)
● This Device is Pb−Free and Halogen Free
APPLICATIONS
● Load Switch● Battery Protection
● Power Management
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 20 V VGSS Gate−Source Voltage ±8 V ID Drain Current – Continuous (Note 1a) 2 A Drain Current – Pulsed 8 PD Power Dissipation for Single Operation 0.5 W (Note 1a) Power Dissipation for Single Operation 0.46 (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET D...
