onsemi FDS4435BZ
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.| Part No. | FDS4435BZ |
|---|---|
| Datasheet | FDS4435BZ Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Max RDS(on) = 20 mW at VGS = −10 V, ID = −8.8 A● Max RDS(on) = 35 mW at VGS = −4.5 V, ID = −6.7 A
● Extended VGSS Range (−25 V) for Battery
APPLICATIONS
● HBM ESD Protection Level of ±3.8 kV Typical (Note 3)● High Performance Trench Technology for Extremely Low RDS(on)
● High Power and Current Handling Capability
● This Device is Pb−Free and RoHS Compliant Specifications
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous TA = 25°C (Note 1a) − Pulsed −30 V ±25 V A −8.8 −50 PD Power Dissipation TA = 25°C (Note 1a) 2.5 W Power Dissipation TA = 25°C (Note 1b) 1.0 EAS Single Pulse Avalanche Energy (Note 4) 24 mJ TJ, TSTG Operating and Storage Junction Tem- −55 to +150 °C perature Range Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
