onsemi MJE13003
NPN Silicon Power Transistor
| Part No. | MJE13003 |
|---|---|
| Datasheet | MJE13003 Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon Power Transistor |
| Buy | Stock & Price |
FEATURES
● Reverse Biased SOA with Inductive Loads @ TC = 100_C● Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C tc @ 1 A, 100_C is 290 ns (Typ)
● 700 V Blocking Capability
● SOA and Switching
APPLICATIONS
Information● Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak (Note 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current − Continuous − Peak (Note 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Current − Continuous − Peak (Note 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD PD TJ, Tstg Value 400...
