onsemi S8050
NPN Epitaxial Silicon Transistor
| Part No. | S8050 |
|---|---|
| Datasheet | S8050 Download |
| Manufacturer |  onsemi |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation● Complementary to SS8550
● Collector Current: IC = 1.5 A
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Base Voltage VCBO 40 V Collector−Emitter Voltage VCEO 25 V Emitter−Base Voltage VEBO 6 V Collector Current IC 1.5 A Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Power Dissipation Derate Above 25°C PD 1 W 8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
