onsemi TF414
N-Channel JFET
FEATURES
● Small IGSS : max 500pA (VGS= 20V, VDS=0V)● Small Ciss : typ 0.7pF (VDS=10V, VGS=0V, f=1MHz)
● Ultrasmall package facilitates miniaturization in end products
● Halogen free compliance
APPLICATIONS
● Impedance conversion, infrared sensor applications Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25C Parameter Symbol Value Drain to Source Voltage VDSS 40 Gate to Drain Voltage VGDS 40 Gate Current IG 10 Drain Current ID 1 Power Dissipation PD 100 Junction Temperature Tj 150 Storage Temperature Tstg 55 to +150 This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Unit V V mA mA mW C C Marking 31 2 SOT-883 A4 M M = Date Code Ordering & Package Information Device TF414T5G Pb-free and Halogen Free Package SOT-883 Shipping 8,000 pcs. / reel Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.