UF3SC065030B7S Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-263-7 package, this device exhibits ultra-low gate charge and...
UF3SC065030B7S Key Features
- On-resistance RDS(on): 27 mW (Typ)
- Operating Temperature: 175 °C (Max)
- Excellent Reverse Recovery: Qrr = 425 nC
- Low Body Diode VFSD: 1.3 V
- Low Gate Charge: QG = 43 nC
- Threshold Voltage VG(th): 5 V (Typ) Allowing 0 to 15 V Drive
- Package Creepage and Clearance Distance > 6.1 mm
- Kelvin Source Pin for Optimized Switching Performance
- ESD Protected, HBM Class 2
- This Device is Pb-Free, Halogen Free and is RoHS pliant