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UF3SC065030B7S - SiC Cascode JFET

General Description

configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • On-resistance RDS(on): 27 mW (Typ).
  • Operating Temperature: 175 °C (Max).
  • Excellent Reverse Recovery: Qrr = 425 nC.
  • Low Body Diode VFSD: 1.3 V.
  • Low Gate Charge: QG = 43 nC.
  • Threshold Voltage VG(th): 5 V (Typ) Allowing 0 to 15 V Drive.
  • Package Creepage and Clearance Distance > 6.1 mm.
  • Kelvin Source Pin for Optimized Switching Performance.
  • ESD Protected, HBM Class 2.
  • This Device is Pb-Free, Halogen Free and i.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-263-7, 650 V, 27 mohm UF3SC065030B7S Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-263-7 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.