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UF3C065040B3 - 650V SiC Cascode JFET

General Description

configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • Typical On-resistance RDS(on),typ of 42 mW.
  • Maximum Operating Temperature of 175°C.
  • Excellent Reverse Recovery.
  • Low Gate Charge.
  • Low Intrinsic Capacitance.
  • ESD Protected, HBM Class 2.
  • Very Low Switching Losses (Required RC-snubber Loss Negligible under Typical Operating Conditions).
  • This Device is Halogen Free and RoHS Compliant with Exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, D2PAK-3, 650 V, 42 mohm UF3C065040B3 TAB 12 3 D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-3 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.