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UF3N120007K4S Datasheet Sic JFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, TO247-4, 1200 V, 7.

General Description

onsemi’s UF3N120007K4S is a 1200 V, 7.1 mW High-Performance Gen 3 Normally-On SiC JFET Transistor.

This device exhibits Ultra-low On resistance (RDS(ON)) in a TO247-4 Package, making it an ideal fit to address the Challenging Thermal Constraints of Solid-state Circuit Breakers and Relay Applications.

Additionally, the JFET is a Robust Device Technology Capable of the High-Energy Switching Required in Circuit Protection Applications.

Key Features

  • Single Digit On-Resistance.
  • Operating Temperature: 175 C (Max).
  • High Pulse Current Capability.
  • Excellent Device Robustness.
  • Silver-Sintered Die Attach for Excellent Thermal Resistance.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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