UF3N120007K4S
UF3N120007K4S is SiC JFET manufactured by onsemi.
Silicon Carbide (SiC) JFET
- EliteSiC, Power N-Channel, TO247-4, 1200 V, 7.1 mohm
Description onsemi’s UF3N120007K4S is a 1200 V, 7.1 mW High-Performance
Gen 3 Normally-On SiC JFET Transistor. This device exhibits Ultra-low On resistance (RDS(ON)) in a TO247-4 Package, making it an ideal fit to address the Challenging Thermal Constraints of Solid-state Circuit Breakers and Relay Applications. Additionally, the JFET is a Robust Device Technology Capable of the High-Energy Switching Required in Circuit Protection Applications.
Features
- Single Digit On-Resistance
- Operating Temperature: 175 C (Max)
- High Pulse Current Capability
- Excellent Device Robustness
- Silver-Sintered...
