UF3C120400B7S Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-263-7 package, this device exhibits ultralow gate charge and...
UF3C120400B7S Key Features
- On-resistance RDS(on): 410 mW (Typ)
- Operating Temperature: 175 °C (Max)
- Excellent Reverse Recovery: Qrr = 51 nC
- Low Body Diode VFSD: 1.5 V
- Low Gate Charge: QG = 22.5 nC
- Low Intrinsic Capacitance
- ESD Protected: HBM Class 2 and CDM Class C3
- This Device is Pb-Free, Halogen Free and is RoHS pliant