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UF3C120400B7S - SiC Cascode JFET

General Description

configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • On-resistance RDS(on): 410 mW (Typ).
  • Operating Temperature: 175 °C (Max).
  • Excellent Reverse Recovery: Qrr = 51 nC.
  • Low Body Diode VFSD: 1.5 V.
  • Low Gate Charge: QG = 22.5 nC.
  • Low Intrinsic Capacitance.
  • ESD Protected: HBM Class 2 and CDM Class C3.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-263-7, 1200 V, 410 mohm UF3C120400B7S Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-263-7 package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.