PE42444 Datasheet Text
PE42444
Document Category: Product Specification
UltraCMOS® SP4T RF Switch, 1.8 GHz- 5 GHz
Features
- Low insertion loss:
- 0.38 dB at 2.6 GHz typical
- 0.48 dB at 3.8 GHz typical
- High linearity IIP3: 85 dBm
- High power handling: 40 dBm RMS, 50 dBm peak
- Operating temperature: 105 °C
- Packaging: 20-lead 4 x 4 mm LGA
Applications
- Analog hybrid beamforming RF front end
- 5G massive MIMO active antenna system (AAS)
- 4G/4.5G TD-LTE macro/micro cell/RRH
Figure 1
- PE42444 Functional Diagram
RFC
ESD
RF1
RF4
RF2
CMOS Control Driver and ESD
V1 V2 SEL
RF3 Switch
Configuration
ESD
Product Description
The PE42444 is a HaRP™ technology-enhanced SP4T RF switch that supports a frequency range from 1.8 GHz to 5 GHz. It delivers extremely low insertion loss, high linearity and fast switching time with high input power handling capability making this device ideal for hybrid analog beamforming and in 5G massive multi-input, multioutput (MIMO) applications. No blocking capacitors are required if DC voltage is not present on the RF ports.
The PE42444 is manufactured on pSemi’s UltraCMOS® process, a patented advanced form of silicon-oninsulator (SOI) technology. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process....