PE53110 Datasheet | pSemi

Features Figure 1 - PE53110 Functional Diagram - Wide frequency range with internal matching ANT TRS EN BYP HL BS VDDA - Integrates single-channel LNA with bypass and high power switch - Max RF input power - 5W Pavg for long term - 10W Pavg for short term - 1.65 d B noise figure - 30 d Bm OIP3/ 32 d B gain at full gain mode - +105 °C operating temperature - Low power consumption: 90 m A - pact package size of 32-lead 5x5 mm Applications - 4G/4.5G TD-LTE macro/micro cell - Pre-5G/5G massive MIMO systems LETE LOAD - Receiver protection system O Product Description The PE53110 is a highly integrated front-end module targeted for wireless infrastructure applications such as S TDD macro/micro base stations and MIMO applications. It is designed for use at the front end of a receiver chain for a TDD-based system. The PE53110 is ideally suited for 4G or next-generation 5G solutions, or small cell applications. B The single-channel receiver integrates an LNA with bypass function and a high power switch. The PE53110 can O be utilized across the 3.3- 3.8 GHz frequency range with internal impedance matching networks. This receiver utilizes p Semi's Ultra CMOS SOI technology which supports input RF power signal up to 5W average power, assuming 8 d B PAR and very low noise figure, excellent linearity and very low power consumption. ©2017, 2018 p Semi Corporation. All rights reserved. - Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification .psemi. DOC-80829-12 - (08/2018) PE53110 Single Channel Switch LNA Module Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this Ultra CMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to...