PE562212 Datasheet | pSemi

Features Figure 1 - PE562212 Functional Diagram - Fully monolithic high-performance PA, LNA, SW - Linear PA with up to +21 d Bm output power - Tx digital gain control with 15-d B range, 1-d B steps - Excellent Rx NF (1.6 d B, typ.) with low-loss bypass OMN and HD Filtering path (0.6 d B, typ.) TX_RX - Bluetooth BDR (+21 d Bm) and EDR (+15 d Bm) ANT LNA operation Low-loss Bypass - Low-to-medium throughput Wi-Fi (MCS7) capability - Minimal external ponents required (bypass cap on VCC and VDD) Control Logic - Packaging: Ultra-pact 14-lead 1.8 × 1.8 × 0.63 mm LGA (MSL3) - GPIO control interface Applications - Smart speakers - Smart lighting - Smart thermostats - In-home appliances - Internet-of-Things (Io T) devices - Range extenders - Wireless audio - Wearables - Sensors Product Description The PE562212 is a high-performance, fully integrated FEM designed for Thread and Zigbee applications and Bluetooth, including Bluetooth Low Energy. The PE562212 is also capable of low-to-medium Wi-Fi throughput for devices that require FW upgrades or applications with the need for increased data traffic. The PE562212 is manufactured on p Semi’s Ultra CMOS® process, a patented advanced form of silicon-oninsulator (SOI) technology. ©2024- 2025, p Semi Corporation. All rights reserved. - Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-115237-7 - (04/2025) PE562212 2.4 GHz SOI Io T Front-end Module Absolute Maximum Ratings Exceeding the absolute maximum ratings listed in Table 1 could cause permanent damage. Restrict operation to the limits in Table 2. Operation between the operating range maximum and the absolute maximum for extended periods could reduce reliability. ESD...