PE02N05 - N-Channel Enhancement Mode Power MOSFET

Description

The PE02N05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS =50V,ID =2.8A RDS(ON).

semi one

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Datasheet Details

Part number	PE02N05
Manufacturer	semi one
File Size	210.88 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE02N05 Datasheet
Additional preview pages of the PE02N05 datasheet.

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Full PDF Text Transcription

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PE02N05 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE02N05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =50V,ID =2.8A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.

Published: Dec 3, 2018 |