Part PE02N05A
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 181.59 KB
semi one
PE02N05A

Overview

The PE02N05A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

  • VDS =60V,ID =2.8A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package