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PE3415A - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = -20V,ID =-4.5A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin Assignment.

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Datasheet preview – PE3415A

Datasheet Details

Part number PE3415A
Manufacturer semi one
File Size 866.10 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3415A Datasheet
Additional preview pages of the PE3415A datasheet.

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Full PDF Text Transcription

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PE3415A P-Channel Enhancement Mode Power MOSFET Description The PE3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4.5A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 47mΩ @ VGS=-4.
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