PE80H11
PE80H11 is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
N-Channel Enhancement Mode Power MOSFET
Description
The PE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Automotive applications
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram
TO-220-3L top...
