PE80H11 - N-Channel Enhancement Mode Power MOSFET

semi one

General Description

The PE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =80V,ID =110A RDS(ON).

📥 Download Datasheet

PE80H11 n-channel enhancement mode power mosfet by semi one - Datasheet Preview

Datasheet Details

Part number	PE80H11
Manufacturer	semi one
File Size	823.08 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE80H11 Datasheet

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N-Channel Enhancement Mode Power MOSFET Description The PE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.