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PE8200 - N-Channel Enhancement Mode Power MOSFET

General Description

The PE8200 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .

Key Features

  • VDS = 20V,ID =12A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment.

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Datasheet Details

Part number PE8200
Manufacturer semi one
File Size 217.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8200 Datasheet

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Full PDF Text Transcription (Reference)

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PE8200 N-Channel Enhancement Mode Power MOSFET Description The PE8200 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications . General Features ● VDS = 20V,ID =12A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=2.