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PE8200 - N-Channel Enhancement Mode Power MOSFET

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semi one

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PE8200 N-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PE8200

Datasheet Details

Part number	PE8200
Manufacturer	semi one
File Size	217.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8200 Datasheet
Additional preview pages of the PE8200 datasheet.

Product details

Description

The PE8200 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

Features

VDS = 20V,ID =12A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=2.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment.

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Published: Dec 3, 2018 |