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PE8203A - N-Channel Enhancement Mode Power MOSFET

General Description

The PE8203A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number PE8203A
Manufacturer semi one
File Size 806.78 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8203A Datasheet

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Full PDF Text Transcription (Reference)

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PE8203A N-Channel Enhancement Mode Power MOSFET Description The PE8203A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.