1N5817S Datasheet
1N5817S Datasheet (YFD)
YFD
ShenZhen YueFeiDa Electronics Technology Co.,Ltd 1N5817S THRU 1N5819S FEATURE 1.0AMP. SCHOTTKY BARRIER RECTIFIERS A-405 .High current capability .Low forward voltage drop .Low power loss, high eff.
1.0AMP. SCHOTTKY BARRIER RECTIFIERS A-405 .High current capability .Low forward voltage drop .Low power loss, high efficiency .High surge capability .High temperature soldering guaranteed 260°C /1 0sec/0.375" lead length at 5 lbs tension .551(14.0) MIN. (5.2) .107(2.7) .080(2.0) DIA. + MECHAN.
1N5817S Datasheet (LGE)
LGE
1N5817S-1N5819S Schottky Barrier Rectifiers Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in.
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 Mechanica.