| Part Number | 25N10 Datasheet |
|---|---|
| Manufacturer | ROUM |
| Overview |
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching ● Low ON Resi.
* Fast Switching * Low ON Resistance(Rdson≤36mΩ) * Low Gate Charge(Typical:61nC) * Low Reverse Transfer Capacitances(Typical:84pF) * 100% Single Pulse Avalanche Energy Test * 100% ΔVDS Test 3 Applications * Power switching applications * LED Boost * UPS power supply * Load switch VDSS = 100V RDS(on. |
25N10 Datasheet and Specifications PDF
The 25N10 is a N-Channel MOSFET.
| Part Number | 25N10 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiv.
* Single Drive Requirement * Low Gate Charge * RoHS Compliant
* SYMBOL Power MOSFET * ORDERING INFORMATION Ordering Number Lead Free Halogen Free 25N10L-TA3-T 25N10G-TA3-T 25N10L-TF1-T 25N10G-TF1-T 25N10L-TF2-T 25N10G-TF2-T 25N10L-TF3-T 25N10G-TF3-T 25N10L-TM3-T 25N10G-TM3-T 25N10L-T. |
| Part Number | 25N10 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
25N10
·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-.
*With TO-252(DPAK) packaging *High speed switching *Standard level gate drive *Easy to use *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Power supply *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM. |