| Part Number | 2N3790 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applica. 1.0 VCE(SAT) IC=5.0A, IB=500mA (2N3791, 2N3792) - 1.0 VBE(ON) VCE=2.0V, IC=5.0A (2N3789, 2N3790) - 2.0 VBE(ON) VCE=2.0V, IC=5.0A (2N3791, 2N3792) - 1.8 VBE(ON) VCE=4.0V, IC=10A - 4.0 hFE VCE=2.0V, IC=1.0A (2N3789, 2N3790) 25 90 hFE VCE=2.0V, IC=1.0A (2N3791, 2N3792) 50 180 hFE VCE=2. |
2N3790 Datasheet PDF
The 2N3790 is a PNP POWER TRANSISTORS.
| Part Number | 2N3790 Datasheet |
|---|---|
| Description | EPITAXIAL-BASE TRANSISTORS |
| Manufacturer | Comset Semiconductor |
| Overview | PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for us. 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 VCE=-30 V, IB=0 2N3791 2N3790 VCE=-40 V, IB=0 2N3792 2N378. |
| Part Number | 2N3790 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi. ing Voltage IC=-200mA; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A VBE(ON)-1 Base-Emitter On Voltage IC=-5A; VCE=-2V VBE(ON)-2 Base-Emitter On Voltage IC=-10A; VCE=-4V hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC. |
| Part Number | 2N3790 Datasheet |
|---|---|
| Description | PNP silicon power transistors |
| Manufacturer | Motorola Semiconductor |
| Overview |
2N3789 thru 2N3792 (SILICON)
CASEll~. (TO-3)
~
PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to NPN type 2N3713 thru 2N3716.
Collector connected t.
dc, VBE = -1. 5 Vdc)
(VCE = 60 Vdc, VBE = -1. 5 Vdc, TC = 150°C) (VCE = 80 Vdc, VBE = -1.5 Vdc, TC = 150°C)
llN3789, llN3791 llN3790, llN37911 2N3789, llN3791 2N3790, llN37911
Emitter-Base Cutoff Current (VEB = 7 Vdc)
DC Current Gain * (IC = 1 Adc, VCE = II Vdc) (Ic = 3 Adc, VCE '" II Vdc) llN378. |