2N3902 Datasheet

The 2N3902 is a Bipolar Transistor.

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Part Number2N3902
ManufacturerMulticomp
Overview The 2N3902 is a silicon NPN transistor in a TO-3 type Package designed for use in high voltage inverters, converters, switching regulators and line Operated amplifiers. RoHS Compliant NPN Maximum R. E = 0 IEBO IE = 100mA. lC= 5V - ON Characteristics (Note 2) DC Current Gain hFE VCE = 5V, lC = 1A 25 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) lC = 2.5A, lB = 0.5A - Dynamic Characteristics Current Gain-Bandwidth Product fT VCE = 10V, lC.
Part Number2N3902
DescriptionNPN High Power Silicon Transistors
ManufacturerVPT Components
Overview 2N3902 & 2N5157 NPN High Power Silicon Transistors Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371 • TO-3 (TO-204AA) Package • Designed for Use in High Voltage Inverters, Converters, .
* Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371
* TO-3 (TO-204AA) Package
* Designed for Use in High Voltage Inverters, Converters, Switching Regulators and Line Operated Amplifiers Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol U.
Part Number2N3902
DescriptionNPN HIGH POWER SILICON TRANSISTOR
ManufacturerMicrosemi
Overview TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices 2N3902 2N5157 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base . ion Voltage IC = 1.0 Adc; IB = 0.1 Adc IC = 3.5 Adc; IB = 0.7 Adc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 2N3902 2N5157 400 500 5.0 6.0 700 2.0 3.5 5.0 100 -65 to +200 Unit Vdc Vdc Vdc Adc Adc W W 0C Max. 1.25 Unit 0C/W TO-3 (TO-204AA).
Part Number2N3902
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi. S) * Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(sat)-2 Base-Emitter Saturation Voltage I.

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