| Part Number | 2N4150S Datasheet |
|---|---|
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 Devices 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emi. ISTICS Emitter-Base Breakdown Voltage IE = 10 µAdc Collector-Emitter Breakdown Voltage IC = 0.1 Adc V(BR)EBO 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S V(BR)CEO 7.0 70 120 170 10 10 10 Vdc Vdc Collector-Emitter Cutoff Current VEB = 0.5 Vdc, VCE . |
2N4150S Datasheet and Specifications PDF
The 2N4150S is a NPN POWER SILICON TRANSISTOR.
| Part Number | 2N4150S Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Semicoa Semiconductor |
| Overview |
Data Sheet No. 2N4150S
Type 2N4150S
Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Power switching transistor for high speed switching applicatons. Housed in a TO-39 case. Also.
* * * * Power switching transistor for high speed switching applicatons. Housed in a TO-39 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Generic Part Number: 2N4150S REF: MIL-PRF-19500/394 . |
| Part Number | 2N4150S Datasheet |
|---|---|
| Description | NPN Power Silicon Transistor |
| Manufacturer | VPT Components |
| Overview |
at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to.
* Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394 * Radiation Tolerant Levels M, D, P, L and R * TO-5 Package * Designed for Use in High Current Switching Applications * Ideal for Converters, Inverters and Wide Band Amplifiers Electrical Characterist. |