2N5199 Datasheet and Specifications PDF

The 2N5199 is a Monolithic N-Channel JFET.

Key Specifications

PackageTO-71
Max Operating Temp150 °C
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Part Number2N5199 Datasheet
ManufacturerVishay
Overview The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched . D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB BENEFITS D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Volta.
Part Number2N5199 Datasheet
DescriptionN-Channel Monolithic Dual JFETs
ManufacturerNational Semiconductor
Overview The 2N5196thru 2N5199 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring low leakage and tight match. Absolute Maximum Ratings (25°o . V DG - 20V, Dl - 200 jiA iDSS 9fs gfs gos gos C, ss C rss NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverss Transfer Capac.
Part Number2N5199 Datasheet
DescriptionMonolithic N-Channel JFET
ManufacturerTEMIC Semiconductors
Overview The 2N5196/5197/5198/5199 JFET duals are designed for highĆperformance differential amplification for a wide range of precision test instrumenta. D Monolithic Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 5 pA D Low Noise D High CMRR: 100 dB Benefits Applications D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal L.
Part Number2N5199 Datasheet
DescriptionN-Channel Dual Silicon Junction Field-Effect Transistor
ManufacturerInterFET
Overview 8/2014 2N5196, 2N5197, 2N5198, 2N5199 N-Channel Dual Silicon Junction Field-Effect Transistor ∙ Differencial Inputs At 25oC free air temperature Static Electrical Characteristics Gate Source Break. .

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