| Part Number | 2N6037 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | . . |
The 2N6037 is a MIDIUM POWER TRANSISTOR.
| Part Number | 2N6037 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | . . |
| Part Number | 2N6037 Datasheet |
|---|---|
| Description | (2N6037 - 2N6039) Silicon Power Transistor |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2). Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6037 VCEO(SUS) Collector-emitter sustaining voltage 2N6038 2N6039 VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emit. |
| Part Number | 2N6037 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and . ess otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=125°C ICEO VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=100mA (2N6034, 2N6037) 40 BVCEO IC=100mA (2N6035, 2N6038) 60 BVCEO IC=100mA (2N6036, 2N6039) 80 V. |
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6039 | SavantIC | Silicon Power Transistor |
| 2N6038 | SavantIC | Silicon Power Transistor |