| Part Number | 2N6039 |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2). Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6037 VCEO(SUS) Collector-emitter sustaining voltage 2N6038 2N6039 VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emit. |
2N6039 Datasheet
The 2N6039 is a (2N6037 - 2N6039) Silicon Power Transistor.
| Part Number | 2N6039 |
|---|---|
| Description | Plastic Darlington Complementary Silicon Power Transistors |
| Manufacturer | onsemi |
| Overview |
(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors
Plastic Darlington complementary silicon power transistors are design.
http://onsemi.com
* ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 4.0 AMPERES DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 40, 60, 80 VOLTS, 40 WATTS * Epoxy Meets UL 94 V *0 @ 0.125 in * Pb *Free Packages are Available* MAXIMUM RATINGS Rating Collector *Emitter Voltag. |
| Part Number | 2N6039 |
|---|---|
| Description | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and . ess otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=125°C ICEO VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=100mA (2N6034, 2N6037) 40 BVCEO IC=100mA (2N6035, 2N6038) 60 BVCEO IC=100mA (2N6036, 2N6039) 80 V. |
| Part Number | 2N6039 |
|---|---|
| Description | Complementary power Darlington transistors |
| Manufacturer | STMicroelectronics |
| Overview |
oleThe devices are manufactured in planar stechnology with “base island” layout and bmonolithic Darlington configuration.
1 2 3
SOT-32
Figure 1. Internal schematic diagram
Obsolete Product(s) - O R1.
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* Good hFE linearity * High fT frequency ) * Monolithic Darlington configuration with t(sintegrated antiparallel collector-emitter diode ducApplications ro * Linear and switching industrial equipment te PDescription oleThe devices are manufactured in planar stechnology with “base island” layout a. |