| Part Number | 2N700 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | 2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier applications. MAXIMUM RATINGS Rating Collector-Base. TOR - BASE VOLTAGE (VOLTS) 2-64 2N700,A (continued) ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted) Characteristic Sym Test Conditions ~olleetor-Base BVCBO IC = 100 /lAde, IE = 0 ~reakdown Voltage ~olleetor-Emitter BVCEO IC = 100 /lAde, IB = 0 ~reakdown Voltage Emitter-Base . |
2N700 Datasheet and Specifications PDF
The 2N700 is a PNP Transistor.
| Part Number | 2N700A Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview | 2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier applications. MAXIMUM RATINGS Rating Collector-Base. OR - BASE VOLTAGE (VOLTS) 2-64 2N700,A (continued) ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted) Characteristic Sym Test Conditions ~olleetor-Base BVCBO IC = 100 /lAde, IE = 0 ~reakdown Voltage ~olleetor-Emitter BVCEO IC = 100 /lAde, IB = 0 ~reakdown Voltage Emitter-Base . |
| Part Number | 2N7008 Datasheet |
|---|---|
| Description | Small-Signal Field Effect Transistor |
| Manufacturer | onsemi |
| Overview |
2N7008
Small−Signal Field Effect Transistor
N−Channel Enhancement Mode Silicon Gate TMOS
…are designed for high voltage, high speed applications such as switching regulators, converters, solenoid, an.
S FET, RDS(ON) = 7.5 W, 60 V
D
G S MARKING DIAGRAM
TO *92 (TO *226) CASE 29 © Semiconductor Components Industries, LLC, 2003 1 October, 2003 * Rev. 0 Publication Order Number: 2N7008/D 2N7008 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Drai. |
| Part Number | 2N7008 Datasheet |
|---|---|
| Description | N-Channel Vertical DMOS FET |
| Manufacturer | Microchip Technology |
| Overview |
The 2N7008 is a low-threshold Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device wi.
* Free from Secondary Breakdown * Low Power Drive Requirement * Ease of Paralleling * Low CISS and Fast Switching Speeds * Excellent Thermal Stability * Integral Source-Drain Diode * High Input Impedance and High Gain Applications * Motor Controls * Converters * Amplifiers * Switches * Power Supply . |