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2SA1096 Datasheet

The 2SA1096 is a Silicon NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SA1096
ManufacturerPanasonic
Overview Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A I Features • High collector to emitter volt.
* High collector to emitter voltage VCEO
* TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5
  –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage 2SC2497 2.
Part Number2SA1096
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute . IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCE=-10V; IB=0 VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-20V,f=1MHz CONDITIONS 2SA1096 2SA1096A SYMBOL MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -1.0 -1.5 -1 -100 -10 80 55 150 220 pF MHz V V V µA µA.
Part Number2SA1096
DescriptionPOWER TRANSISTOR
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . ge IC= -2mA; IB= 0 -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -1.

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