2SA1576A Datasheet and Specifications PDF

The 2SA1576A is a PNP Silicon Transistor.

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Part Number2SA1576A Datasheet
ManufacturerGalaxy Microelectronics
Overview Production specification PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW)  Excellent HFE Linearity.  Complements the 2SC4081. Pb Lead-free 2SA1576A APPLICATIONS .
* Power dissipation.(PC=200mW)
* Excellent HFE Linearity.
* Complements the 2SC4081. Pb Lead-free 2SA1576A APPLICATIONS
* General purpose application.
* Switching and amplification. ORDERING INFORMATION Type No. Marking 2SA1576A FQ/FR/FS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃.
Part Number2SA1576A Datasheet
DescriptionGeneral Purpose Transistor
ManufacturerROHM
Overview Transistors 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS General Purpose Transistor (−50V, −0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS !Features 1) Excellent hFE linearity. 2). 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. !External dimensions (Units : mm) 2SA1037AK (1) 2SA1576A (1) 0.95 0.95 1.9 2.9 0.65 0.65 0.8 0.7 0.4 (3) 0.3 (2) (3) 1.25 1.6 2.8 0.15 0.15 2.1 0.2 (2) 0.8 1.1 !Structure Epitaxial planar .
Part Number2SA1576A Datasheet
DescriptionPNP Silicon Epitaxial Planar Transistor
ManufacturerSeCoS Halbleitertechnologie GmbH
Overview The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. FEATURES Complements of the 2SC4081 Excellent hFE Linearity SOT-323 A L 3 Top View CB 12 KE 1 3. Complements of the 2SC4081 Excellent hFE Linearity SOT-323 A L 3 Top View CB 12 KE 1 3 2 CLASSIFICATION OF hFE Product-Rank 2SA1576A-Q Range 120~270 Marking FQ 2SA1576A-R 180~390 FR 2SA1576A-S 270~560 FS PACKAGE INFORMATION Package MPQ SOT-323 3K LeaderSize 7’ inch D F GH J REF..
Part Number2SA1576A Datasheet
DescriptionPlastic-Encapsulated Transistors
ManufacturerTRANSYS
Overview Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1576A FEATURES Power dissipation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF . Power dissipation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF : 200 mW (Tamb=25℃) 2. 30¡ À0. 05 Collector current : -150 mA ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 Unit.