Datasheet4U Logo Datasheet4U.com

2SA1615 Datasheet

The 2SA1615 is a PNP Silicon Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SA1615
ManufacturerNEC
Overview of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir.
* Large current capacity: IC(DC): −10 A, IC(pulse): −15 A
* High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE = −2.0 V, IC = −0.5 A) VCE(sat) ≤ −0.25 V (@IC = −4.0 A, IB = −0.05 A) QUALITY GRADES
* Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.
Part Number2SA1615
DescriptionPNP Transistor
ManufacturerStanson Technology
Overview P TYPE TTANSISTORS -10A 2SA1615, 1615-Z The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and are ideal for high-efficiency DC/DC converters due t. Large current capacity: Ic(DC): -10A, Ic(pulse) : -15A High hFE and low collector saturation voltage : hFE = 200 MIN (@Vec = -2V, Ic = -0.5A) VCE(sat) ¡Ø -0.25V (@Ic = -4.0A, IB = -0.05A) 1.Base 2.Collector 3.Emitter ABSOLUTE MAXIMUM RATINGS (Ta = 25¢J www.DataSheet4U.com ) RATINGS -30 -20 -10 -1.
Part Number2SA1615
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation voltage: hFE= 200min (VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A) ·100% avalanche tested ·Minimum Lot-to-Lot v. red trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -50mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= -4A; IB= -50mA ICBO Collector Cutoff.