| Part Number | 2SB1119 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:1785A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1119/2SD1619
LF Amplifier, Electronic Governor Applications
Features
· Very small size making it easy to provide highdensity, sm.
* Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1119/2SD1619] ( ) : 2SB1119 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collect. |
2SB1119 Datasheet and Specifications PDF
The 2SB1119 is a PNP Transistor.
Key Specifications
| Part Number | 2SB1119 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | MLS Microelectronics |
| Overview |
Features
• Small Flat Package • LF Amplifier, Electronic Governor Applications
2SB1119
Transistor (PNP)
X:Rank
BB
BC E
Marking and pin assignment
SOT-89-3L top view
Schematic diagram
Maximum Rati.
* Small Flat Package * LF Amplifier, Electronic Governor Applications 2SB1119 Transistor (PNP) X:Rank BB BC E Marking and pin assignment SOT-89-3L top view Schematic diagram Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA TJ,Tstg Parameter Collector-Base Volta. |
| Part Number | 2SB1119 Datasheet |
|---|---|
| Description | PNP Epitaxial Planar Silicon Transistors |
| Manufacturer | Galaxy Microelectronics |
| Overview |
PNP Epitaxial Planar Silicon Transistors
FEATURES
Very small size making it easy to provide High-density,small-size hybrid IC’s.
Pb
Lead-free
Production specification
2SB1119
ORDERING INFORMATIO.
* Very small size making it easy to provide High-density,small-size hybrid IC’s. Pb Lead-free Production specification 2SB1119 ORDERING INFORMATION Type No. Marking 2SB1119 BB SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO. |
| Part Number | 2SB1119 Datasheet |
|---|---|
| Description | PNP Silicon Medium Power Transistor |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Overview | 2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Colle. b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e. |