SeCoS Halbleitertechnologie GmbH 2SB1119
PNP Silicon Medium Power Transistor
| Part No. | 2SB1119 |
|---|---|
| Datasheet | 2SB1119 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Silicon Medium Power Transistor |
| Buy | Stock & Price |
FEATURES
b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155ELECTRICAL CHARACTERISTICS
˄Tamb=25ć unlessotherwise specified˅CLASSIFICATION OF hFE(1) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE˄1˅ Test conditions MIN -25 -25 -5 TYP MAX UNIT V V V Ic=-10A ˈIE=0 IC= -1 mA , IB=...
