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2SB1119 - PNP Silicon Medium Power Transistor

Key Features

  •     b1 Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES     b1 Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.