The 2SB1316 is a Power Transistor.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 5.5 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | 2SB1316 Datasheet |
|---|---|
| Manufacturer | ROHM |
| Overview |
Transistors
Power Transistor (−100V , −2A)
2SB1316
2SB1316
zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Co.
1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage Collector-emitter voltage
VCBO VCEO
*100 *100 . |
| Part Number | 2SB1316 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in damper diode ·Complementary NPN types:2SD1980 ·100% avalanche tested ·Minimum Lot-to-Lot variation. IC=-50uA MIN TYP. MAX UNI T -100 V BVCEO Collector-Emitter breakdown voltage IC=-5mA -100 V BVEBO Emitter-Base breakdown voltage IE=-3mA -10 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Curre. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| CoreStaff | 2267 | 1+ : 0.587 USD 50+ : 0.411 USD 100+ : 0.346 USD 300+ : 0.302 USD |
View Offer |
| CoreStaff | 1820 | 1+ : 0.847 USD 20+ : 0.677 USD 50+ : 0.476 USD 100+ : 0.409 USD |
View Offer |
| CoreStaff | 42 | 1+ : 0.847 USD 20+ : 0.677 USD 50+ : 0.476 USD 100+ : 0.409 USD |
View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| B1316 | ROHM | 2SB1316 |