| Part number | 2SB1316 |
|---|---|
| Datasheet | 2SB1316-InchangeSemiconductor.pdf |
| File Size | 216.52 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
|
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1316 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=-50uA MIN TYP. MAX UNI T -100 V BVCEO Collector-Emitter breakdown voltage IC=-5mA -100 V BVEBO Emitter-Base breakdown voltage IE=-3mA -10 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA ICBO Collector Cutoff Current...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB1316 | Power Transistor | Rohm |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB1089 | Silicon PNP Power Transistors |
| 2SB1090 | Silicon PNP Power Transistors |
| 2SB1095 | Silicon PNP Power Transistors |
| 2SB1100 | Silicon PNP Power Transistors |
| 2SB1144 | Silicon PNP Power Transistors |
| 2SB1152 | Silicon PNP Power Transistors |
| 2SB1153 | Silicon PNP Power Transistors |
| 2SB1182 | Silicon PNP Power Transistor |
| 2SB1184 | Silicon PNP Power Transistor |
| 2SB1201 | Silicon PNP Power Transistor |
