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2SB1316 - Silicon PNP Power Transistor

General Description

Darlington connection for high DC current gain Built in resistor between base and emitter Built in damper diode Complementary NPN types:2SD1980 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Mo

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isc Silicon PNP Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in damper diode ·Complementary NPN types:2SD1980 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1316 isc website：www.iscsemi.