Datasheet Details
| Part number | 2SB1316 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.52 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1316-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1316 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.52 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1316-InchangeSemiconductor.pdf |
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·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in damper diode ·Complementary NPN types:2SD1980 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1316 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1316 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=-50uA MIN TYP.
MAX UNI T -100 V BVCEO Collector-Emitter breakdown voltage IC=-5mA -100 V BVEBO Emitter-Base breakdown voltage IE=-3mA -10 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
IB= -1mA ICBO Collector Cutoff Current VCB= -100V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1316 | Power Transistor | Rohm |
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